简介:LowcostsiliconcarbonnanometerpowderwassynthesizedbycarbothermalreductionmethodwithnanometerSiO2andcarbonasrawmaterial.Itssynthesisthermodynamicswerediscussed.TheinfluenceofLaonTG-DSCcurvewasalsoanalyzed.ItindicatedthatthesynthesisprocessofSiCpowderhadtwosteps.InthefirststeptwomedialproductionsofSiOgandCOgformed,andinthesecondstep,β-SiCwasfinallysynthesized.After0.3%Laadded,atthefirststep,theinitiatoryformingtemperatureofproducingSiO(g)andCO(g)declinedfrom1351.4to1250.9℃,andthethermalactivationenergydecreasedfrom223.6to34.7J·g-1;atthesecondsteptheinitiatoryformingtemperatureofsynthesizingβ-SiCpowderdeclinedfrom1526.5to1357.8℃,andthethermalactivationenergydecreasedfrom693.7to295.7J·g-1.WithoutLaadded,thebestsynthesistechnologyforβ-SiCpowderwas1550℃for120min,averagepowderdiameterwasbiggerabout150nm.WithLaadded,thebestsynthesistechnologywas1500℃for120min,averagepowderdiameterwasabout100nm.
简介:利用CVI法,在两种不同类型的国产SiC纤维束中引入(PyC/SiC)4或(PyC/SiC)8多层界面,并进一步致密化,制备含不同纤维种类和界面类型的SiCf/SiCMini复合材料。研究纤维种类和界面类型对SiCf/SiCMini复合材料力学性能和断裂机制的影响。结果表明:致密化的SiCf/SiCMini复合材料已形成一个整体,在纤维和基体连接处可观察到明显的界面层,且界面厚度均匀;A/(PyC/SiC)4/SiC、B/(PyC/SiC)4/SiC、A/(PyC/SiC)8/SiC三种SiCf/SiCMini复合材料的最大拉伸强度分别达到466,350和330MPa,最终拉伸应变分别达到0.519%,0.219%和0.330%;拉伸断口均有纤维拔出,且随纤维种类或界面类型不同,纤维拔出长度和断口形貌有所差异。其中A/(PyC/SiC)4/SiC以ModelⅡ断裂机制发生断裂,B/(PyC/SiC)4/SiC和A/(PyC/SiC)8/SiC以ModelⅠ断裂机制发生断裂。
简介:SiCwhiskerswith'rosarybead'morphologyweresynthesizedusingsuitablesiliconsourceandcarbonsourcethroughsolidreactionatthetemperatureabove1537K.ThediameterandlengthoftheSiCwhiskerswereabout0.1-1.0μmand20-100μm,respectively.Thelargestdiameteroftheirenlargedendsofthewhiskerswasabout0.2-1.0μm,anditgraduallyandsmoothlydecreasedtothesizeoftheplainpartofthewhiskers.TheresultsofX-raydiffractionanalysisshowthatthecrystallinestructureoftheobtainedSiCwhiskersisβ-SiC.ItisconsideredthattheSiCwhiskersgrowviaavapor-solidmechanism.
简介:TheCW-CO2laserdrivengasreactionwasappliedtopreparenano-sizedSiCpowder,SiH4andC2H4ofhighpurties,asstartingmaterials,weremixedtacertainrationandintroducedintotheresactioncell.Thegasesflewacrossthelaserbeamorthogonallyandthuswereheatedbylaserbeam.Thenano-sizedSiCultrafinepowderwswereformedthroughthermicgasreation.Thefinalproductivityofthisprocesswas97%,Theobtainedpowderswerecharacterizedandanalyzed.ChemicalanalysisrevealedthattheSiCcontentwas95.38wt%,Oxygen,theprimaryimpurity,weighted1.32%whiletraceimpurities,suchascalcium,magnesiumandothermetals,wereonly0.03%,XRD,XPSandTEMindicatedthatthpowderparticleswerenearlysphericalandnotagglomerated.Theparticlesizerangedfrom10nmto25nmwithanaverageof15nm,Theparticlestredtobenoncrystalline.
简介:交流UPS的主要功能,是为电力系统中的各种变配电设备、监控用计算机等提供高质量的不间断电源。本文重点介绍了常时逆变器供电方式的UPS电路结构,并将电路中功率模块内的半导体元件全部置换成SiC半导体元件。全SiC功率模块用于SiC-UPS时,电力变换损耗约减小30%,轻载时的运转效率达到90%以上,而且可靠性高。
简介:CurrentlytheservicelifeofCDQshaftsinChinaismainlyrestrictedbythepropertiesoftheinclinedfluebricks.Inthiswork,basedonthesystematicanalysisofthedamagemechanismofinclinedfluerefractories,highperformancemullite-SiCbricksweredeveloped.Thebrickswereproducedbycorundum,andalusite,SiCandotherhighpurityrawmaterials.Metalsiliconandaluminaultramicropowderwereaddedtoformdispersionmulti-phasestructure,fortifyingthematrixandimprovingthemicrostructure.Theproductshaveexcellentpropertiessuchaslowporosity,highdensity,goodwearresistance,highrefractorinessunderload,andgoodthermalshockresistance.Theproductscanreplacetheordinarymullite-SiCbricksandobtainagoodservicelife.
简介:Moleculardynamics(MD)simulationswereperformedtoinvestigateF+continuouslybombardingSiCsurfaceswithenergiesof100eVatdifferentincidentanglesat300K.Thesimulatedresultsshowthatthesteady-stateuptakeofFatomsincreaseswithincreasingincidentangle.Withthesteady-stateetchingestablished,aSi-C-Freactivelayerisformed.ItisfoundthattheetchingyieldofSiisgreaterthanthatofC.IntheF-containingreactionlayer,theSiFspeciesisdominantwithincidentangleslessthan30o.Forallincidentangles,theCFspeciesisdominantoverCF2andCF3.
简介:ASiC/2024compositewasmadebysemisolidcasting.ThewettingbetweenSiCandAlmatrixisimprovedbytreatingSiCparticlesatahightemperature,coatingK2ZrF6,andaddingMgtotheAlmelt,AneffectivewaytoremovethegasaroundSiCparticleswasalsofound.Microstructureswereobservedunderopticalmicroscope(OM)andscanningelectronmicroscopy(SEM).TheresultsshowthatSiCparticlesandAlmatrixarewellbondedandnogapsorcavitiesaroundtheparticlesareobserved.SiCparticlesdistributehomogeneouslyintheAlmatrix.TheexistenceofSiCparticlesresultsintheincreaseofwearresistanceandstrength.
简介:随着电力电子技术的发展,对于功率器件的要求也越来越高。为了更好的满足大功率应用场合的要求,需要多SiCMOSFET进行并联,目前并联应用的方案在电机控制、逆变器等电力电子系统中的应用前景十分广泛。但是,由于SiCMOSFET的静态因数和动态因素会直接影响到并联SiCMOSFET的均流特性,从而造成单个器件承受过大的电流应力而损坏。因此,对于SiCMOSFET均流特性的研究是非常有必要的。本文通过对SiCMOSFET电路模型进行研究,给出了一种将两个功率支路共同接入同一共用磁芯的耦合线圈进行主动均流的方法,并对主要功率器件的设计方法进行了研究。