Study of strain in partially relaxed Ge epilayers on Si(100) substrate-中国期刊网

摘要 Geepilayersofdifferentthicknessesaregrownbymolecular-beamepitaxywithSbasasurfactantonSI(100)substrates,X-raydiffractionillustratesthattheseGethinfilmsarepartiallystrained.andthestrainsdecreasegraduallywithincreasingepilayerthickness,RamanspectrarevealadownwardshiftoftheGe-Gemodepeakastheepilayerthicknessincreases.Intheregionsofhighstrain,therelationshipbetweentheRamanshiftofthismodeandthestraininthepartiallyrelaxedsamplesisconsiderablydifferentfromthelinearrelationshipreportedbefore,whichismainlyattributedtothespatialconfinementeffectofphononsinananocrystal.

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Study of strain in partially relaxed Ge epilayers on Si(100) substrate

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Study of strain in partially relaxed Ge epilayers on Si(100) substrate

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