Intense Yellow Photoluminescence from Silicon Oxynitride Films Prepared by Dual Ion Beam Sputtering-中国期刊网

摘要 Inthiswork,resultsonthestudyofthestructureandphotoluminescence(PL)propertiesofSiOxNythinfilmsarepresented.Thefilmsweredepositedatroomtemperatureusingadual-ion-beamco-sputteringsystem.TheXRDandTEMresultsshowthatthedepositedfilmshaveanamorphousstructure.IntheXPSresult,wefindN1sspectraconsistofonesymmetricsinglepeakat397.8eV,indicatingthatthenitrogenatomsaremainlybondedtosilicon.ItisinagreementtotheresultofFTIR.InSiOxNyfilms,anintensesinglePLpeakat590nmisobserved.Furthermore,withtheincreaseoftheNcontentintheSiOxNyfilms,theintensityofthePLpeakat590nmincreasesalot.ThePLpeakof590nmissuggestedtooriginatefromN-relateddefects.

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Intense Yellow Photoluminescence from Silicon Oxynitride Films Prepared by Dual Ion Beam Sputtering

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Intense Yellow Photoluminescence from Silicon Oxynitride Films Prepared by Dual Ion Beam Sputtering

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