Effects of thickness on cubic GaN nucleation layers on GaAs(001) substrates

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摘要 TheeffectsofgrowthtimeonthestructureandmorphologyofcubicGaNnucleationlayersonGaAs(001)substratesbymetalorganicchemicalvapordeposition(MOCVD)havebeeninvestigatedusingasynchrotronX-raydiffraction(XRD).TheXRDresultsshowthattheGaN111reflectionsat54.75°inχareameasurablecomponent,howeverthe002reflectionsparalleltoGaAs(001)surfacearenotdetected.TheXRDΦscansandpolefiguresgiveaconvincingproofthattheGaNnucleationlatyersshowexactlythecubicsymmetricalstructure.Thecoherencelengthsalongtheclose-packed<111>directionestuimatedfromthe111peakarenanometerorderofmagnitude,Theoptimalphotoluminescence(PL)spectrumwasobtainedfromthecubicGaNepilayerdepositedonthenucleationlayerfor60sec.
机构地区 不详
出版日期 2001年01月11日(中国期刊网平台首次上网日期,不代表论文的发表时间)
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