摘要
TheeffectsofgrowthtimeonthestructureandmorphologyofcubicGaNnucleationlayersonGaAs(001)substratesbymetalorganicchemicalvapordeposition(MOCVD)havebeeninvestigatedusingasynchrotronX-raydiffraction(XRD).TheXRDresultsshowthattheGaN111reflectionsat54.75°inχareameasurablecomponent,howeverthe002reflectionsparalleltoGaAs(001)surfacearenotdetected.TheXRDΦscansandpolefiguresgiveaconvincingproofthattheGaNnucleationlatyersshowexactlythecubicsymmetricalstructure.Thecoherencelengthsalongtheclose-packed<111>directionestuimatedfromthe111peakarenanometerorderofmagnitude,Theoptimalphotoluminescence(PL)spectrumwasobtainedfromthecubicGaNepilayerdepositedonthenucleationlayerfor60sec.
出版日期
2001年01月11日(中国期刊网平台首次上网日期,不代表论文的发表时间)