I—V Curve Characterization of n^＋／p／p^＋ Silicon Solar Cell-中国期刊网

摘要 TheanalysisofsolarcellperformancehasbeendonebysimulatingtheexternalI-Vcharacteristicsofn^+/p/p^+singlecrystalsiliconsolarcellunderhighlightintensityand1.5airmass(AM).Thismethodallowsthemaximizationofsolarcellefficiency.Tofabricatelow-costn^+/p/p^+singlecrystalsiliconsolarcells,solidsourceofdopedphosphorousandboronwasused.

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I—V Curve Characterization of n^＋／p／p^＋ Silicon Solar Cell

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I—V Curve Characterization of n^＋／p／p^＋ Silicon Solar Cell

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