摘要
Dopedmicro-crystallinesiliconfilmsaredepositedattemperaturesaslowas400℃bythecatalyticchemicalvapordepositionmethodusingasilaneandhydrogengasmixture.ElectricalpropertiessuchasthecarrierconcentrationandtheHallmobilityareinvestigatedforvariousmeasuringtemperatures.Itisfoundthatthegrainsofmicro-crystallinesiliconarepreferentiallyorientedalongthe(220)direction,andthattheHallmobilityislargerthan8cm^2·V^-1·s^-1,thecarrierconcentrationisabout1×10^17cm^-1-1×10^19cm^-3atroomtemperature.
出版日期
1999年03月13日（中国期刊网平台首次上网日期，不代表论文的发表时间）
