X—ray reflectivity measurement of δ—doped erbium profile in silicon molecular

摘要 Synchrontronradiationx-rayreflectivitymeasurementisusedtostudytheconcentrationprofileofaδ-dopedErlayerinSiepitaxialfilmgrownbymolecular-beamepitaxy.Theoscillationofthereflectivityamplitudeasafunctionofreflectionangleisobservedintheexperiment.Bydoingatheoreticalsimulation.theconcentrationprofileofEratomscouldbederied.Itisshownthattheoriginallygrownδ-dopedErlayerchangesintoanexpionentiallydecayedfunctionduetotheErsegregation.Thetemperaturedependenceofthe1/edecaylengthindicatesthatthesegregationisakineticallylimitedprocess.Theactivationenergyisdeterminedtobe0.044±0.005eV.

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X—ray reflectivity measurement of δ—doped erbium profile in silicon molecular—beam epitaxial layer

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X—ray reflectivity measurement of δ—doped erbium profile in silicon molecular—beam epitaxial layer

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