摘要
DepletionmodeHEMTwithrefractorymetalsilicideWSigatehasbeende-signedandfabricated.Epicated.Epitaxialmodulationdopingmaterialsweregrownbyahome-madeMBEsystem.Thegatelengthandwidthforlownoisedepletiondeviceswere1.2～1.5μmand2×160μmrespectively.Theelectronmobilityofthefabricateddevicesistypically6080cm^2/V·sat300Kand68000cm^2/V·sat77K.Thesheetelectronconcentrationnsis9×10^11cm^-2，Thesource-draincontactswithAuGeNi/Auwerefabricatedusingevaporatingandlift-offtechnique.tofurtherreducethecontactresistance,thewaferalloyedat520℃for3mininthehydrogen(H2)gas.SchottkygatewasformedusingWSi.Thetranseon-ductanceofthedepletionmodedeviceis110～130mS/mmatroomtemperature,Thede-vicescanbeappliedincommunicationsatelliteatmicrowavefreqencyof3.83GHzandradarreceiverat1.5GHz.Itsnoisefigureisabout2～3dB.
出版日期
1996年01月11日（中国期刊网平台首次上网日期，不代表论文的发表时间）
