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2009年5期
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Atomic Layer Deposition of Al2O3 on H-Passivated GeSi: Initial Surface Reaction Pathways with H/GeSi(100)-2 × 1
Atomic Layer Deposition of Al2O3 on H-Passivated GeSi: Initial Surface Reaction Pathways with H/GeSi(100)-2 × 1
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摘要
未填写
DOI
pj0ek0gv4y/739551
作者
施煜;孙清清;董琳;刘晗;丁士进;张卫
机构地区
不详
出处
《中国物理快报:英文版》
2009年5期
关键词
表面钝化
AL2O3
反应途径
原子层沉积
密度泛函理论
SiGe
分类
[理学][物理]
出版日期
2009年05月15日(中国期刊网平台首次上网日期,不代表论文的发表时间)
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来源期刊
中国物理快报:英文版
2009年5期
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相关关键词
表面钝化
AL2O3
反应途径
原子层沉积
密度泛函理论
SiGe
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