简介：Amethodhasbeendevisedtoanalyzemultilayerelectricallythickcircularmi-crostripantennaexcitedbyaprobe.Thecurrentontheprobeistakentobeuniform.Thismethodwasverifiedbyanalysisandexperimentofanelectricallythickcircularmicrostripan-tennawithanairgap.BasedonthefreespaceelectricdyadicGreen’sfunction,thefieldexpressionofanhorizontalelectricdipole(HED),whichislocatedatanypointofthemultilayermediaandpointsinanydirection,hasbeenderived.ByusingthisfieldexpressionandtheRichmondre-actionequation,anintegralequationintermsofelectriccurrentonthepatchisformulated.Byproperlychoosingcurrentexpansionmodes,thismethodcanbeusedforanelectricallythickmi-crostripantenna.Thetheoreticalresultsagreeverywellwithexperimentaldataforanelectricallythickcircularmicrostripantennawithanairgap.

简介：新奇毫米波浪waveguide-to-微条转变基于磁性联合在电磁的地的这paper.The模式变换被介绍在矩形的波导和怪癖的伪同轴的线的电子飞机与任意的形状的戒指长带线被认识到，它部分充满媒介并且由外部、内部的矩形的conductors.The组成结构有低损失，宽带宽，紧缩的结构，和避免的debug.From的优点27GHz到40GHz，

简介：Consideringtheshortcomingsoftheexistingvehicle-to-vehicle(V2V)communicationantennas,thispaperproposesaregularhexagonbroadbandmicrostripantenna.ByloadingshortingpinsandetchingV-shapeslotswithdifferentsizeateachangleoftheregularhexagonpatch,itrealizesimpedancematchingandobtainsbetterimpedancebandwidth.Thesimulatedresultsshowthattherelativebandwidthofthisantennareaches35.55%,coversthefrequencybandof4.74GHzto6.79GHz.Theantennaacquiresanomni-directionalradiationpatterninthehorizontalplanewhoseoutofroundnessislessthan0.5dB.Inaddition,theantennaismanufacturedandtested,whosetestedresultsarebasicallyconsistentwithsimulatedresults.Becausetheheightofantennais3mm,itiseasytobehiddenonroofofavehicleforV2Vcommunication.

简介：AgeneralizedspectralGreen’sfunctionformulationofN-layersubstratestructureisgivenwiththreedimensionsources,whichisasetofclosedformformulas.Afull-waveanalysismodelforrectangularmicrostripantennascoveredwithN-dielectriclayershasbeenestablishedbyusingtheabovespectralGreen’sfunction.Theunknownsurfacecurrentdensityontheniicrostrippatchforsuchstructureisfoundasasolutionofanintegralequation.TheinputVSWRandradiationpatternsoftheantennaarealsoobtained.Thenumericalresultshavebeenverifiedbytheexperimentalresults.

简介：Theprobe-fedpatchantennaswereproposedbychangingtheparameterssuchasdielectricmaterialsanddimensionsofpatchfordetailinvestigationofchangesinoutputcharacteristics.Fourrectangularslotswereintroducedseparatelyforoptimizingtheantennadesignandcharacteristics.Thisstudyillustratedthechangesofoutputcharacteristicsofanantennawithrespecttothenumberofintroducedslotsontheradiatingpatchinadditiontotheeffectofvariousdielectricmaterialsonantennaperformances.Theantennaperformanceswereanalyzedbyplottingtheobservationofvariousdielectricmaterials.Thechangesofantennacharacteristicswerealsoobservedbyintroducingfournumbersofslotsoneachedgeofthepatchtoimproveradiationcharacteristicswithawiderimpedancebandwidth.

简介：这份报纸基于双层结构建议一条紧缩的极化微条天线。整个天线的带宽被分别地扩展顶和底部层拓宽。在天线结构和尺寸的调整的设计以后，建议天线能两个都在2.33GHz2.97GHz完成左边、右边的圆形的极化。测量结果显示有效带宽是在S乐队的640MHz，相对带宽能与S11完成24%不到15dB。

简介：Thispaperpresentstheanalysisofopenmicrostripstructuresbyusingdiakopticmethodoflines(ML)combinedwithperiodicboundaryconditions(PBC).Theparametersofmicrostrippatchareobtainedfrompatchcurrentexcitedbyplanewave.ImpedancematrixelementsarecomputedbyusingfastFouriertransform(FFT),andreducedequationissolvedbyusingdiakoptictechnique.Consequently,thecomputingtimeisreducedsignificantly.TheconvergencepropertyofsimulatingopenstructurebyusingPBCandthecomparisonofthecomputertimebetweenusingPBCandusualabsorbingboundarycondition(ABC)showthevalidityofthemethodproposedinthispaper.Finally,theresonantfrequencyofamicrostrippatchiscomputed.Thenumericalresultsobtainedareingoodagreementwiththosepublished.

简介：Inrecentyears,microstripantennashavebeenmorewidelyappliedinsatellitecommunications,mobilephones,unmannedaerialvehicle(UAV),andweapons.Amicro-electro-mechanicalsystems-based(MEMS-based)high-resistancesiliconC-bandmicrostripantennaarrayhasbeendesignedfortheintelligentammunition.Thecenterfrequencyis4.5GHz.Acavityhasbeendesignedinsubstratetoreducethedielectricconstantofsiliconandhigh-resistancesiliconhasbeenusedasthematerialofsubstratetoimprovethegainofantenna.ItisveryeasytobemanufacturedbyusingMEMStechnologybecauseoftheimprovedstructureoftheantenna.Theresultsshowthatthegainoftheantennais8dBandvoltagestandingwaveratio(VSWR)islessthan2bytheanalysisandsimulationinhighfrequencystructuresimulator(HFSS).