摘要
Intrinsiccarrierconcentration（ni）isoneofthemostimportantphysicalparametersforunderstandingthephysicsofstrainedSiandSi1-xGexmaterialsaswellasforevaluatingtheelectricalpropertiesofSi-basedstraineddevices.Uptonow,thereportonquantitativeresultsofintrinsiccarrierconcentrationinstrainedSiandSi1-xGexmaterialshasbeenstilllacking.Inthispaper,byanalyzingthebandstructureofstrainedSiandSi1-xGexmaterials,boththeeffectivedensitiesofthestatenearthetopofvalencebandandthebottomofconductionband（NcandNv）at218,330and393KandtheintrinsiccarrierconcentrationrelatedtoGefraction（x）at300KweresystematicallystudiedwithintheframeworkofKPtheoryandsemiconductorphysics.ItisfoundthattheintrinsiccarrierconcentrationinstrainedSi（001）andSi1-xGex（001）and（101）materialsat300KincreasessignificantlywithincreasingGefraction（x）,whichprovidesvaluablereferencestounderstandtheSibasedstraineddevicephysicsanddesign.
出版日期
2015年05月15日（中国期刊网平台首次上网日期，不代表论文的发表时间）
