An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect-中国期刊网

摘要 Inthispaper,thethree-dimensional(3D)couplingeffectisdiscussedfornanowirejunctionlesssilicon-on-insulator(SOI)FinFETs.Withfinwidthdecreasingfrom100nmto7nm,theelectricfieldinducedbythelateralgatesincreasesandthereforetheinfluenceofbackgateonthethresholdvoltageweakens.Foranarrowandtallfin,thelateralgatesmainlycontrolthechannelandthereforetheeffectofbackgatedecreases.Asimpletwo-dimensional(2D)potentialmodelisproposedforthesubthresholdregionofjunctionlessSOIFinFET.TCADsimulationsvalidateourmodel.Itcanbeusedtoextractthethresholdvoltageanddopingconcentration.Inaddition,thetuningofbackgateonthethresholdvoltagecanbepredicted.

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An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect

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An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect

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