Design, Fabrication, and Modeling of CMOS-Compatible Double Photodiode-中国期刊网

摘要 Adoublephotodiode(PD)constructedbyp?/NwelljunctionandN-well/p-subjunctionwasdesignedandfabricatedinaUMC0.18-lmCMOSprocess.BasedonthedevicestructureandmechanismofdoublePD,anovelsmall-signalequivalentcircuitmodelconsideringthecarriertransiteffectandtheparasiticRCtimeconstantwaspresented.Bythismodelwithcompleteelectroniccomponents,thedoublePDcanbeincorporatedinacommercialcircuitsimulator.ThecomponentvalueswereextractedbyfittingthemeasuredS-parametersusingsimulatedannealingalgorithm,andagoodagreementbetweenthemeasurementandthesimulationresultswasachieved.

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Design, Fabrication, and Modeling of CMOS-Compatible Double Photodiode

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Design, Fabrication, and Modeling of CMOS-Compatible Double Photodiode

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