摘要
ThegatedielectricthicknessdecreasesdramaticallywiththecontinuousscalingofMOSdevices,whichhasseriousconsequencesontheleakagecurrentandthepowerconsumptionoftheSiO2-basedMOSdevices.Hafniumdioxide(HfO2),asakindofhigh-kmaterial,arerecognizedasalternativestoSiO2forfutureadvancedgatedevicesandspaceapplications[1].Radiation-inducedeffectsonconventionalSiO2dielectricshavebeeninvestigated.Now,anenormousamountofeffortwasrequiredtoadaptthenewhigh-ksystemsforradiationhardapplication.
出版日期
2016年01月11日（中国期刊网平台首次上网日期，不代表论文的发表时间）
