SY509-3-196[篇名]Anovelstrainedsurface-channelpMOSFETSi{sub}0.7Ge{sub}0.3withanALDTiN/AI{sub}20{sub}3/HfAIO{sub}x/AI{sub}20{sub}3gatestack；SY509-3-197[篇名]Aquantitativestudyofthenano-scratchbehaviorofboronandcarbonnitridefilms；……
表面工程：英文版
2005年3期
