简介:Measurementsoftheexcitationpower-dependenceandtemperature-dependencephotoluminescence(PL)areperformedtoinvestigatetheemissionmechanismsofInGaN/GaNquantumwells(QWs)inlaserdiodestructures.ThePLspectralpeakisblueshiftedwithincreasingtemperatureoveracertaintemperaturerange.ItisfoundthattheblueshiftrangewaslargerwhenthePLexcitationpowerissmaller.ThisparticularbehaviorindicatesthatcarriersarethermallyactivatedfromlocalizedstatesandpartiallyscreenthepiezoelectricfieldpresentintheQWs.Thesmallblueshiftrangecorrespondstoaweakquantum-confinedStarkeffect(QCSE)andarelativelyhighinternalquantumefficiency(IQE)oftheQWs.