简介:Adoublephotodiode(PD)constructedbyp?/NwelljunctionandN-well/p-subjunctionwasdesignedandfabricatedinaUMC0.18-lmCMOSprocess.BasedonthedevicestructureandmechanismofdoublePD,anovelsmall-signalequivalentcircuitmodelconsideringthecarriertransiteffectandtheparasiticRCtimeconstantwaspresented.Bythismodelwithcompleteelectroniccomponents,thedoublePDcanbeincorporatedinacommercialcircuitsimulator.ThecomponentvalueswereextractedbyfittingthemeasuredS-parametersusingsimulatedannealingalgorithm,andagoodagreementbetweenthemeasurementandthesimulationresultswasachieved.
简介:A0.18lmCMOSlownoiseamplifier(LNA)byutilizingnoise-cancelingtechniquewasdesignedandimplementedinthispaper.Current-reuseandself-biastechniqueswereusedinthefirststagetoachieveinputmatchingandreducepowerconsumption.ThecoresizeoftheproposedCMOSLNAcircuitwithoutinductorwasonly128lm9226lm.ThemeasuredpowergainandnoisefigureoftheproposedLNAwere20.6and1.9dB,respectively.The3-dBbandwidthcoversfrequencyfrom0.1to1.2GHz.Whenthechipwasoperatedatasupplyvoltageof1.8V,itconsumed25.69mW.ThehighperformanceoftheproposedLNAmakesitsuitableformultistandardlow-costreceiverfront-endswithintheabovefrequencyrange.
简介:对一款国产CMOS图像传感器进行了不同射线粒子的辐照试验,研究了质子、中子和γ射线等粒子辐照对器件饱和输出电压的影响.试验结果表明,在γ射线和质子辐照下,器件的饱和输出电压显著退化,而在中子辐照下,饱和输出电压基本保持不变,表现出较好的抗中子能力.对γ射线和质子辐照下器件饱和输出电压的退化机理进行了分析,饱和输出电压的退化主要受电离总剂量效应影响:随着辐照累积剂量的增加,饱和输出电压逐渐减小且在退火中的变化趋势与CMOS图像传感器像素单元的饱和输出信号变化趋势一致.辐照导致饱和输出电压退化的主要原因是光敏二极管周围的LOCOS隔离氧化层内产生了大量的辐照感生电荷.