简介：Adoublephotodiode(PD)constructedbyp?/NwelljunctionandN-well/p-subjunctionwasdesignedandfabricatedinaUMC0.18-lmCMOSprocess.BasedonthedevicestructureandmechanismofdoublePD,anovelsmall-signalequivalentcircuitmodelconsideringthecarriertransiteffectandtheparasiticRCtimeconstantwaspresented.Bythismodelwithcompleteelectroniccomponents,thedoublePDcanbeincorporatedinacommercialcircuitsimulator.ThecomponentvalueswereextractedbyfittingthemeasuredS-parametersusingsimulatedannealingalgorithm,andagoodagreementbetweenthemeasurementandthesimulationresultswasachieved.

简介：A0.18lmCMOSlownoiseamplifier(LNA)byutilizingnoise-cancelingtechniquewasdesignedandimplementedinthispaper.Current-reuseandself-biastechniqueswereusedinthefirststagetoachieveinputmatchingandreducepowerconsumption.ThecoresizeoftheproposedCMOSLNAcircuitwithoutinductorwasonly128lm9226lm.ThemeasuredpowergainandnoisefigureoftheproposedLNAwere20.6and1.9dB,respectively.The3-dBbandwidthcoversfrequencyfrom0.1to1.2GHz.Whenthechipwasoperatedatasupplyvoltageof1.8V,itconsumed25.69mW.ThehighperformanceoftheproposedLNAmakesitsuitableformultistandardlow-costreceiverfront-endswithintheabovefrequencyrange.